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  3. Modelling radiation damage to pixel sensors in the ATLAS detector

Modelling radiation damage to pixel sensors in the ATLAS detector

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DOI
10.7892/boris.143579
Publisher DOI
10.1088/1748-0221/14/06/P06012
Abstract
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 1015 1 MeV neq/cm2).
Date Issued
2019-06-11
Publication Type
Article
Subject(s)
500 Science > 530 Physics
Language(s)
en
Author(s)
Franconi, Laura  
Albert Einstein Center for Fundamental Physics (AEC)  
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Miucci, Antonio  
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Merlassino, Claudia  
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Albert Einstein Center for Fundamental Physics (AEC)  
Haug, Sigve  orcid-logo
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Weber, Michael  orcid-logo
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Anders, John Kenneth  
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Albert Einstein Center for Fundamental Physics (AEC)  
Beck, Hans Peter  orcid-logo
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Ereditato, Antonio  
Albert Einstein Center for Fundamental Physics (AEC)  
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Weston, Thomas Daniel  
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Albert Einstein Center for Fundamental Physics (AEC)  
Additional Credits
Physikalisches Institut, Laboratorium für Hochenergiephysik (LHEP)  
Albert Einstein Center for Fundamental Physics (AEC)  
Journal
Journal of instrumentation
Publisher
Institute of Physics Publishing IOP
ISSN
1748-0221
Access(Rights)
Unknown
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